Samsung has developed a new form of NAND memory with greatly improved capacity and performance. It’s dubbed Phase-change Random Access Memory (PRAM) and it currently only exists in prototype form, but Samsung intends to bring it to market by 2008.
The memory achieves significantly higher speeds due to its Charge Trap Flash (CTF) architecture, which reduces inter-cell noise levels and drives at faster speeds. PRAM is up to 30-times faster because it can rewrite data without having to erase previously stored data. Samsung has said that it can achieve densities up to 64GB, but so far it has only demonstrated a 512MB version.
Samsung touts ‘first of its kind’ memory device [The Register]